Electronic Processes in Dielectric Films

T. W. Hickmott is investigating capacitance, conduction and energetic electronic processes in dielectric films, particularly in anodic oxide films. Phenomena that have been studied include:

• Polarization of anodic Al2O3.
  
  
• Fowler-Nordheim tunneling in Al-Al2O3-Au structures.
  
  
• Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in Al-Al2O3-Au diodes.
  
  
• Electron emission from Al-Al2O3-Au diodes.
  
  
• The dependence of interface states at the Al2O3-metal interface on the deposition conditions of the metal electrode.
  
  
• The temperature dependence of the dielectric constant of anodic Al2O3 films.
  
  

Publications:

T. W. Hickmott, "Polarization measurements in anodized Al-Al2O3-Au diodes," Appl. Phys. Lett. 75, 2999 (1999).

T. W. Hickmott, "Polarization and Fowler-Nordheim tunneling in anodized Al-Al2O3-Au diodes," J. Appl. Phys. 87, 7903 (2000).

T. W. Hickmott, "Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al-Al2O3-Au diodes," J. Appl. Phys. 88, 2805 (2000).

T. W. Hickmott, "Interface states at the anodized Al2O3-metal interface," J. Appl. Phys. 89, 5502 (2001).